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| HITFET=BTS 133 Smart Lowside Power Switch Features * Logic Level Input * Input Protection (ESD) *=Thermal shutdown with latch * Overload protection * Short circuit protection * Overvoltage protection * Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 50 21 7 V m A A 2000 mJ limitation * Status feedback with external input resistor * Analog driving possible Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M D rain 2 1 IN dv /d t lim ita tio n C u rre n t lim ita tio n O ve rvoltag e p rotection ESD O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n S ho rt c ircu it S h ort circ uit p rotection p ro te ctio n S o u rce 3 H IT F E T Page 1 19.05.2000 BTS 133 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 C Unclamped single pulse inductive energy ID(ISO) = 7 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 , ID =0,5*7A td = 400 ms, RI = 2 , ID = 7A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 90 74 E 40/150/56 3000 V EAS 2000 mJ Tj Tstg Ptot Symbol VDS VDS(SC) IIN no limit | IIN | 2 - 40 ... +150 - 55 ... +150 90 W C Value 60 32 mA Unit V Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) RthJC RthJA RthJA 1.4 75 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 A has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Drain connection. PCB mounted vertical without blown air. Page 2 19.05.2000 BTS 133 Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 C, VIN = 0 V Input threshold voltage ID = 1,4 mA Input current - normal operation, ID Page 3 19.05.2000 BTS 133 Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Initial peak short circuit current limit VIN = 10 V, VDS = 12 V Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off VIN to 90% ID : VIN to 10% ID : 70 to 50% Vbb : ton toff -dVDS/dton dVDS/dtoff ----40 70 1 1 100 170 3 3 V/s s RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V RL = 2,2 , VIN = 0 to 10 V, Vbb = 12 V 50 to 70% Vbb: RL = 2,2 , VIN = 10 to 0 V, Vbb = 12 V ID(lim) 21 28 40 ID(SCp) 65 A Symbol min. Values typ. max. Unit Protection Functions Thermal overload trip temperature Unclamped single pulse inductive energy ID = 7 A, Tj = 25 C, Vbb = 32 V ID = 7 A, Tj = 150 C, Vbb = 32 V Tjt EAS 2000 450 150 165 C mJ Inverse Diode Inverse diode forward voltage IF = 5*7A, tm = 300 S, VIN = 0 V VSD 1.08 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. Page 4 19.05.2000 BTS 133 Block Diagramm Terms Inductive and overvoltage output clamp D RL I IN 1 IN HITFET S 3 2 ID VDS Vbb V Z D S HITFET VIN Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN ID ESD-ZD I Source I D(Lim) ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V. t0 tm t1 t2 t0: Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Page 5 19.05.2000 BTS 133 Maximum allowable power dissipation Ptot = f(Tc ) 100 W BTS 133 On-state resistance RON = f(Tj ); ID=7A; VIN =10V 100 m 80 80 RDS(on) 70 70 60 max. Ptot 60 50 40 30 20 10 0 0 C 150 50 40 30 20 10 0 -50 C typ. 20 40 60 80 100 120 160 -25 0 25 50 75 100 150 Tj On-state resistance RON = f(Tj ); ID= 7A; VIN=5V 120 Typ. input threshold voltage VIN(th) = f(Tj); ID =1,4mA; VDS =12V 2.0 V m 100 1.6 RDS(on) 90 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 C typ. max. VIN(th) 150 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 C -25 0 25 50 75 100 150 Tj Page 6 Tj 19.05.2000 BTS 133 Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj =25C 24 Typ. output characteristic ID = f(VDS); Tj =25C Parameter: VIN 25 10V 6V 5V A 4V A 16 ID ID 12 8 15 10 Vin=3V 4 5 0 0 1 2 3 4 5 6 V 8 0 0 1 2 3 V 5 VIN VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 K/W 1 10 0 D=0.5 0.2 ZthJC 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Page 7 19.05.2000 BTS 133 Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S V bb C V IN HITFET V V IN thermal shutdown V = RST *IIN(3) Page 8 19.05.2000 BTS 133 Package P-TO220-3-45 Ordering Code Q67060-S6501-A3 4.4 9.9 8 1.3 0.2 2.4 Package P-TO220-3-1 Ordering Code Q67060-S6501-A2 10.5 1.5 3.6 0.75 1.05 2.54 0.5 GPT05164 1) shear and punch direction no burrs this surface Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1.5 9.2 1) Page 9 19.05.2000 |
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